A Stochastic Approach for Investigation Ultrafast Phenomena in Semiconductors

Abstract

In this paper a stochastic approach is proposed for investigation the ultrafast evolution of electrons interacting with phonons in the presence of an applied electric field. The quantum-kinetic equation describing the above ultrafast phenomena contains polynomial non-linearity which allows to use the link between non-stationary iterative processes and the branching stochastic processes. The considered stochastic approach relies on the numerical Monte Carlo (MC) theory as applied to the integral form of the quantum-kinetic equation and estimates the electron energy distribution using statistical averages over long evolution times. The numerical tests were performed for GaAs material parameters. The numerical results for the electron energy distribution function in the case of a non-linear electron quantum transport is compared with the obtained results in the linear case.